Water quality area
Chang-Shin E&P is a company that specializes in environment and facility plant
We will do our best until the company with technology and creativity, there is customer satisfaction.
Products
Device’s principle
This is the device that produces pure by discharging by filling up the strongly acidic positive and negative ion exchange resin and strong alkalinity negative ion exchange resin within the independent tower when it comes to the filtered water in which at least 95% of the SS in the water and ion component was removed by having the RO filtering membrane pass through. Positive and negative ion exchange resin is regenerated with 5~10% (hydrochloric acid (HC) and negative ion exchange resin is regenerated with 3~8% caustic soda (NaOH). Meanwhile, resin with decreased ion exchange capability needs to be regenerated.
Reaction principle
Pure production
R(-SO3H)2 + Ca(HCO3)2→R(-SO3H)2 + 2H2CO3
R-SO3H + NaCl→R-SO3Na + HCl
R=NOH + H2CO3→R=NHCO3 +H2O
R=NOH + HCl→R=NCI + H2O
R=NOH + H2SiO3→R=NHSiO3 + H2O
R(=NOH)2 + CA(HCO3)2→R(=NHCO3)2 + CA(OH)2
R=NOH + NaCl→R=NCI + NaOH
R(-SO3H)2 + Ca(OH)2→R(-SO3)2CA + 2H2O
R-SO3H + NaOH→R-SO3H + NaOH
Regeneration response
R(-SO3)2 Ca+ 2HCl→R(-SO3H)2 + CaCl2
R-SO3Na + HCl→R-SO3H + NaCl
R=NHCO3 + NaOH→R=NOH + NaHCO3
R=NHSiO3 + 2NaOH→R=NOH + NaSiO3 + H2O
Usage
Semiconductor cleansing water, ultra-pure production’s post-treatment, plating water, Electro painting water, pharmaceutical, and industrial water for photo
Processing Unit
and standard
| Model No. | Flow Rate (㎥/hr) |
Diameter (Ø) |
Height (H) |
Pipe (mm) |
ION EXCHANGE RESIN (L) | Note | |
|---|---|---|---|---|---|---|---|
| Cation | Anion | ||||||
| CHS-U20 | 2 | 200 | 1830 | 15 | 10 | 20 | |
| CHS-U30 | 3 | 300 | 1830 | 15 | 20 | 40 | |
| CHS-U40 | 4 | 435 | 1830 | 25 | 50 | 100 | |
| CHS-U50 | 5 | 580 | 2440 | 32 | 100 | 200 | |
| CHS-U100 | 10 | 770 | 2745 | 50 | 200 | 400 | |
| CHS-U150 | 15 | 960 | 2745 | 65 | 300 | 600 | |
| CHS-U250 | 25 | 1200 | 2745 | 80 | 500 | 1000 | |
※ 1㎲Recycle with forced injection method based on HCI, NaOH pump injection in case of (for semiconductor cleansing) abnormality.
